Skip to main content

Table 3 Device parameters of STT-RAM

From: Improving reliability of non-volatile memory technologies through circuit level techniques and error control coding

  Nominal Variance
Transistor channel length(nm) 32 5%
Transistor channel width (nm) 96, 128, 160 5%
Transistor threshold (RDF) 0.4 V σ VT =40 mV
Rp (P) 2.25K Approximately 6%
RAP (AP) 4.5K Approximately 6%
MTJ initial angle 0 0.1π