Table 3 Device parameters of STT-RAM
Nominal | Variance | |
|---|---|---|
Transistor channel length(nm) | 32 | 5% |
Transistor channel width (nm) | 96, 128, 160 | 5% |
Transistor threshold (RDF) | 0.4 V | σ VT =40 mV |
Rp (P) | 2.25K | Approximately 6% |
RAP (AP) | 4.5K | Approximately 6% |
MTJ initial angle | 0 | 0.1π |